3 Process Steps – 1 Reactor

Taking technology to the next level

Tegal DRIE process tools are compatible with both silicon and dielectric etching in the same chamber, allowing then to open the SiO2 mask and then etch the silicon in the same chamber.

  • Specialized plasma source with high dissociation (for silicon etch) and high ionization (for SiO2 etch)
  • Unique Bias Power Delivery to allow high and medium bias power in RF and LF modes.
  • Improved hardware to minimize the polymer deposition to always keep the chamber well seasoned.
  • Special dry cleaning procedure to switch back and forth between Si and SiO2 etching.

Tegal DRIE process tools can also strip many types of thin photoresist in situ after mask opening. 3 different processes without unloading the wafer:

  • High throughput
  • Easy operation
  • Less manual operation with the wafer This option can also be used to etch the buried oxide layer for a SOI wafer.

TSV Application

Mask-Etch_Composite

SOI Via Application

SOI-Via_Composite

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